Chi tiết sản phẩm
Mosfet cao tần BLF177
Đặc tính
PHILIPS HF/VHF power MOS transistor
Thông số kỹ thuật
PHILIPS HF/VHF power MOS transistor
FEATURES:
· High power gain
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch.
APPLICATIONS:
· Designed for industrial and military applications in the HF/VHF frequency range.
DESCRIPTION:
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information.
QUICK REFERENCE DATA:
RF performance at Th = 25 °C in a common source test circuit.
|
MODE OF |
f |
VDS |
PL |
Gp |
hD |
d3 |
d5 |
|
OPERATION |
(MHz) |
(V) |
(W) |
(dB) |
(%) |
(dB) |
(dB) |
|
SSB class-AB |
28 |
50 |
150 |
(PEP) |
>20 |
>35 |
<-30 |
|
CW class-B |
108 |
50 |
150 |
typ. 19 |
typ. 70 |
- |
- |
LIMITING VALUES:
In accordance with the Absolute Maximum Rating System (IEC 60134).
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
Drain-source voltage |
|
- |
125 |
V |
|
VGS |
Gate-source voltage |
|
- |
-20 |
V |
|
ID |
Drain current (DC) |
|
- |
16 |
A |
|
Ptot |
Total power dissipation |
Tmb £ 25 °C |
- |
220 |
W |
|
Tstg |
Storage temperature |
|
-65 |
+150 |
°C |
|
Tj |
Junction temperature |
|
- |
200 |
°C |
