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Mosfet cao tần BLF177

Mosfet cao tần BLF177
Mosfet cao tần BLF177 Mosfet cao tần BLF177 Mosfet cao tần BLF177

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PHILIPS HF/VHF power MOS transistor

Thông số kỹ thuật

 

PHILIPS HF/VHF power MOS transistor

 FEATURES:

·  High power gain

·  Low intermodulation distortion

·  Easy power control

·  Good thermal stability

·  Withstands full load mismatch.

APPLICATIONS:

·  Designed for industrial and military applications in the HF/VHF frequency range.

DESCRIPTION:

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.

A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information.

QUICK REFERENCE DATA:

RF performance at Th = 25 °C in a common source test circuit.

MODE OF

f

VDS

PL

Gp

hD

d3

d5

OPERATION

(MHz)

(V)

(W)

(dB)

(%)

(dB)

(dB)

SSB class-AB

28

50

150

(PEP)

>20

>35

<-30

CW class-B

108

50

150

typ. 19

typ. 70

-

-

LIMITING VALUES:

In accordance with the Absolute Maximum Rating System (IEC 60134).

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

Drain-source voltage

 

-

125

V

VGS

Gate-source voltage

 

-

-20

V

ID

Drain current (DC)

 

-

16

A

Ptot

Total power dissipation

Tmb £ 25 °C

-

220

W

Tstg

Storage temperature

 

-65

+150

°C

Tj

Junction temperature

 

-

200

°C

 

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