Chi tiết sản phẩm
Mosfet cao tần BLF 278
Đặc tính
Hãng sản xuất ASI USA
Thông số kỹ thuật
PHILIPS BLF278 50V VHF Mosfet Transistor 300W
FEATURES:
High power gainEasy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS:
Broadcast transmitters in the VHF frequency range.
DESCRIPTION:
Dual push-pull silicon N-channel enhancement mod evertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramiccaps. The mounting flange provides the common source connection for the transistors.
QUICK REFERENCE DATA:
RF performance at Th=25C in a push-pull common source test circuit.
|
MODE OF OPERATION |
f(MHz) |
VDS(V) |
PL(W) |
Gp(dB) |
D(%) |
|
CW, class-B |
108 |
50 |
300 |
>20 |
>60 |
|
CW, class-C |
108 |
50 |
300 |
typ. 18 |
typ. 80 |
|
CW, class-AB |
225 |
50 |
250 |
>14 typ. 16 |
>50 typ. 55 |
LIMITING VALUES:
In accordance with the Absolute Maximum System (IEC60134). Per transistor section
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
drain-source voltage |
|
- |
125 |
V |
|
VGS |
gate-source voltage |
|
- |
±20 |
V |
|
ID |
drain current (DC) |
|
- |
18 |
A |
|
Ptot |
total power dissipation |
Tmb≤25C; total device; bothsections equally loaded |
- |
500 |
W |
|
Tstg |
storage temperature |
|
|
150 |
oC |
|
Tj |
junction temperature |
|
|
-200 |
oC
|
